68A 1200V N-Channel Sic Power Mosfet Dcc080m120A to- 247 -3L

Model NO.
DCC080M120A
Model
Dcc080m120A
Batch Number
2023
Brand
Wxdh
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Reference Price
$ 3.69 - 4.10
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Product Description

68A 1200V N-Channel Sic Power Mosfet Dcc080m120A to-247-3L 68A 1200V N-Channel Sic Power Mosfet Dcc080m120A to-247-3L 68A 1200V N-Channel Sic Power Mosfet Dcc080m120A to-247-3L 68A 1200V N-Channel Sic Power Mosfet Dcc080m120A to-247-3L
 68A 1200V N-channel SIC Power MOSFET
1 Description
This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required.
 
Features
Higher System Efficiency
Reduced Cooling Requirements
Increased Power Density
Increased System Switching Frequency
Applications
Power Supplies
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies
Pulsed Power applications
 
PARAMETER SYMBOL Test Conditions VALUE UNIT
     
Drian-to-Source Voltage VDSmax VGS=0V, ID=100μA 1200 V
Gate-to-Source Voltage max VGSmax Absolute maximum values -10/+25 V
Gate-to-Source Voltage max V GSS Recommended operational values -5/+20 V
Continuous Drain Current I D TC=25ºC VGS=20V,TC=25ºC 36 A
TC=100ºC VGS=20V,TC=100ºC 24 A
Pulsed Drain Current I DM Pulse width tp limited by TJmax 80 A
Power Dissipation   P tot Tc=25ºC, TJ=150ºC 192 W
  P tot Tc=25ºC, TJ=150ºC W
Junction Temperature Range T j   -55~150 ºC
Storage Temperature Range T stg   -55~150 ºC
 
4.2 Thermal Characteristics
Parameter Symbol Rating Unitº
Thermal Resistance,Junction to Case-sink RthJC 0.6 ºC/W
Thermal Resistance,Junction to Ambient RthJA 40 ºC/W

Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
DCC080M120A TO-247-3L DCC080M120A Pb-free Tube 300/box
DCCF080M120A TO-247-4L DCCF080M120A Pb-free Tube 300/box
 

 

Semiconductor

EMOTIVEDESIGN.PT, 2023