Insulated Gate Bipolar Transistor IGBT G40n120d to- 247

Model NO.
G40N120D
Batch Number
2023
Brand
Wxdh
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Reference Price
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Product Description

Insulated Gate Bipolar Transistor IGBT G40n120d to-247 Insulated Gate Bipolar Transistor IGBT G40n120d to-247 Insulated Gate Bipolar Transistor IGBT G40n120d to-247 Insulated Gate Bipolar Transistor IGBT G40n120d to-247
PARAMETER SYMBOL RATING UNIT
 
Collector-Emitter Voltage V CES 1200 V
Gate- Emitter Voltage V GES ±20 V
Collector Current I C (T=25ºC) 80 A
Collector Current  (Tc=100ºC) 40 A
Pulsed Collector Current I CM 160 A
Diode Continuous Forward Current I F  @TC = 100 °C 20 A
Diode Maximum Forward Current I FM 60 A
Total Dissipation T C =25ºC P D 278 W
T C =100ºC P D 150 W
Junction Temperature T j 150 ºC
storage Temperature T stg -55~150 ºC
 
Features
FS Trench Technology, Positive temperature coefficient
Low saturation voltage: V CE(sat) , typ = 1.9V
@ I C =40A and V GE =15V
Applications
Inverter welding machine
General frequency converter
UPS
Motor control
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
G40N120D TO-247 G40N120D Pb-free Tube 300/box
 

 

Semiconductor

EMOTIVEDESIGN.PT, 2023